High-performance self-aligned (Al,Ga)As/(In,Ga)As pseudomorphic HIGFETs

Author

Abrokwah, J.K. ; Stephens, J.M.

Author_Institution

McDonnell Douglas Aeronaut. Co., Huntington Beach, CA, USA

Volume

10

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

225

Lastpage

226

Abstract

Transconductance as high as 676 mS/mm at 300 K was observed to 0.7*10- mu m/sup 2/ n-channel devices (HIGFETs) made on epilayers with Al/sub 0.3/Ga/sub 0.7/As insulator thickness of 200 AA and In/sub 0.15/Ga/sub 0.85/As channel thickness of 150 AA. An FET K value (K=W/sub g/U epsilon /2aL/sub g/) as large as 10.6 mA/V/sup 2/ was also measured from another device with transconductance of 411 mS/mm. The high K values are achieved under normal FET operation without hole-injection or drain-avalanche breakdown effects. These results demonstrate the promise of pseudomorphic (Al,Ga)As/(In,Ga)As HIGFETs for high-performance circuit applications.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; 411 mS; 676 mS; Al/sub 0.3/Ga/sub 0.7/As-In/sub 0.15/Ga/sub 0.85/As; K-value; drain current; epilayers; heterostructure IGFET; high-performance circuit applications; n-channel devices; normal FET operation; pseudomorphic HIGFET; transconductance; Circuits; FETs; Fabrication; Gallium arsenide; Insulation; Molecular beam epitaxial growth; Rapid thermal annealing; Threshold voltage; Transconductance; Very large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31728

Filename

31728