Title :
Surface recombination current with a nonideality factor greater than 2
Author :
Ghannam, Moustafa Y. ; Mertens, Robert P.
Author_Institution :
Interuniv. Microelectron. Center, Leuven, Belgium
fDate :
6/1/1989 12:00:00 AM
Abstract :
It is shown both theoretically and experimentally that under inverted surface conditions the surface recombination current of a bipolar transistor has an exponential nonideality factor >2. The behavior of the surface recombination current follows closely that of the excess leakage current in stressed-self-aligned silicon bipolar transistors at forward bias.<>
Keywords :
bipolar transistors; semiconductor device models; Si; bipolar transistor; excess leakage current; exponential nonideality factor; forward bias; inverted surface conditions; stressed self aligned bipolar transistors; surface recombination current; Bipolar transistors; Degradation; Electrons; Hot carrier injection; Leakage current; Radiative recombination; Semiconductor device doping; Silicon; Spontaneous emission; Stress;
Journal_Title :
Electron Device Letters, IEEE
