The effect of transients on hot carriers

Author

Hänsch, W. ; Weber, W.

Author_Institution

Siemens AG, Munich, West Germany

Volume

10

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

252

Lastpage

254

Abstract

The influence of time-dependent voltages on hot-carrier generation in MOSFETS is studied by transient device simulation. For transient times down to the nanosecond range, no transient effects on hot-carrier formation and injection are found. This result is confirmed experimentally by substrate current measurements under various dynamic voltage conditions down to rise/fall times of 3 ns. This result has important consequences for the interpretation of dynamic stress data, since it means that device-related dynamic effects can be neglected in comparison with interface-related effects in transient ranges relevant to practical applications.<>

Keywords

insulated gate field effect transistors; 3 ns; MOSFETS; device-related dynamic effects; dynamic voltage conditions; effect of transients; fall-times; hot carriers; hot-carrier formation; hot-carrier generation; interface-related effects; interpretation of dynamic stress data; rise-times; substrate current measurements; time-dependent voltages; transient device simulation; transient times; Charge carrier processes; Current measurement; Equations; Hot carriers; Human factors; Impact ionization; MOSFET circuits; Stress; Substrate hot electron injection; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31737

Filename

31737