DocumentCode
1165337
Title
Thin-base bipolar transistor fabrication using gas immersion laser doping
Author
Weiner, K.H. ; Sigmon, Thomas W.
Author_Institution
Lawrence Livermore Nat. Lab., Livermore, CA, USA
Volume
10
Issue
6
fYear
1989
fDate
6/1/1989 12:00:00 AM
Firstpage
260
Lastpage
263
Abstract
Gas immersion laser doping (GILD) is used to fabricate the base and emitter regions of narrow-base n-p-n bipolar transistors. The GILD process is unique in that it allows simple fabrication of box-like impurity profiles which can be placed very accurately in the vertical dimension (+or-100 AA). Transistors with base widths ranging from 700 to 1200 AA and DC forward current gains greater than 50 are fabricated.<>
Keywords
bipolar transistors; laser beam applications; semiconductor doping; 700 to 1200 A; GILD process; base widths; box-like impurity profiles; current gains; gas immersion laser doping; narrow-base n-p-n bipolar transistors; simple fabrication; thin base bipolar transistors; Bipolar transistors; Doping profiles; Gas lasers; Impurities; Laboratories; Optical control; Optical device fabrication; Rapid thermal processing; Silicon; Surface emitting lasers;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.31740
Filename
31740
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