Title :
Thin-base bipolar transistor fabrication using gas immersion laser doping
Author :
Weiner, K.H. ; Sigmon, Thomas W.
Author_Institution :
Lawrence Livermore Nat. Lab., Livermore, CA, USA
fDate :
6/1/1989 12:00:00 AM
Abstract :
Gas immersion laser doping (GILD) is used to fabricate the base and emitter regions of narrow-base n-p-n bipolar transistors. The GILD process is unique in that it allows simple fabrication of box-like impurity profiles which can be placed very accurately in the vertical dimension (+or-100 AA). Transistors with base widths ranging from 700 to 1200 AA and DC forward current gains greater than 50 are fabricated.<>
Keywords :
bipolar transistors; laser beam applications; semiconductor doping; 700 to 1200 A; GILD process; base widths; box-like impurity profiles; current gains; gas immersion laser doping; narrow-base n-p-n bipolar transistors; simple fabrication; thin base bipolar transistors; Bipolar transistors; Doping profiles; Gas lasers; Impurities; Laboratories; Optical control; Optical device fabrication; Rapid thermal processing; Silicon; Surface emitting lasers;
Journal_Title :
Electron Device Letters, IEEE
