DocumentCode :
1165345
Title :
An analytical technique for counteracting drift in ion-selective field effect transistors (ISFETs)
Author :
Jamasb, Shahriar
Author_Institution :
Mazdak Technol., Carlsbad, CA, USA
Volume :
4
Issue :
6
fYear :
2004
Firstpage :
795
Lastpage :
801
Abstract :
The instability of the dc operating point in pH-sensitive ion-selective field effect transistors (ISFETs) renders the continuous monitoring of physiological pH using these devices inaccurate. This instability, commonly known as drift, manifests itself as a relatively slow, monotonic change in the measuring output signal in the absence of variations in the pH. In this work, a method for correction of ISFET drift is presented. This method takes advantage of the relatively small instantaneous drift rate in ISFETs to compensate for the drift signal superimposed on the sensor output. The validity of this method is experimentally confirmed by continuous monitoring of pH under in vitro conditions approximating metabolic acidosis using a Si3N4-gate pH-sensitive ISFET.
Keywords :
drift instability; ion sensitive field effect transistors; pH measurement; silicon compounds; ISFET drift; Si3N4; dc operating point instability; drift counteraction; drift signal; instantaneous drift rate; ion-selective field effect transistors; metabolic acidosis; pH-sensitive ISFET; physiological pH; Biomedical monitoring; Blood; Condition monitoring; FETs; In vitro; In vivo; Insulation; PROM; Packaging; Stability; 65; Continuous monitoring; ISFET; drift; instability; ion-selective field effect transistor; pH;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2004.833148
Filename :
1359841
Link To Document :
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