Ion-implanted GaAs/AlGaAs heterojunction FET´s grown by MOCVD

Author

Wang, G.W. ; Feng, Milton ; Liaw, Y.P. ; Kaliski, Robert ; Lau, C.L. ; Ito, C.

Author_Institution

Ford Microelectron., Inc., Colorado Springs, CO, USA

Volume

10

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

264

Lastpage

266

Abstract

The successful fabrication of an ion-implanted GaAs/AlGaAs heterojunction FET device is discussed. Half-micrometer gate-length FET devices are fabricated by ion implantation into GaAs/AlGa heterostructures grown by metalorganic chemical vapor deposition (MOCVD) on 3-in-diameter GaAs substrates. The FET device exhibits a maximum extrinsic transconductance of 280 mS/mm with reduced transconductance variation over 2 V of gate bias. Excellent microwave performance is achieved with an f/sub t/ of 40 GHz, which is comparable to results obtained from 0.25- mu m gate GaAs MESFETs. The effects of ion implantation on the heterojunction and corresponding device characteristics are also discussed.<>

Keywords

III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; ion implantation; junction gate field effect transistors; solid-state microwave devices; vapour phase epitaxial growth; 0.5 micron; 3 in; 40 GHz; GaAs substrate wafers; GaAs-AlGaAs; MOCVD; MOVPE; device characteristics; fabrication; gate bias; heteroepitaxy; heterojunction; heterojunction FET device; heterostructures; ion implantation; metalorganic chemical vapor deposition; microwave FET; microwave performance; semiconductors; transconductance; Chemical vapor deposition; Fabrication; Gallium arsenide; Heterojunctions; Ion implantation; MESFETs; MOCVD; Microwave FETs; Microwave devices; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31741

Filename

31741