• DocumentCode
    1165522
  • Title

    Very wide spectrum multiquantum well superluminescent diode at 1.5 mu m

  • Author

    Kondo, Satoshi ; Yasaka, Hiroshi ; Noguchi, Y. ; Magari, K. ; Sugo, M. ; Mikami, Osamu

  • Author_Institution
    NTT Opto-electron. Labs., Kanagawa, Japan
  • Volume
    28
  • Issue
    2
  • fYear
    1992
  • Firstpage
    132
  • Lastpage
    133
  • Abstract
    An InGaAs-InGaAsP multiquantum well superluminescent diode (SLD) emitting at 1.5 mu m has been studied. Broad spectral widths exceeding 100 nm are achieved under a wide injection current range. The maximum spectral width is 170 nm, which gives a calculated coherence length of 13 mu m, approximately one third that of 1.5 mu m conventionally available bulk SLDs.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; spectral line breadth; superradiance; 1.5 micron; InGaAs-InGaAsP; LED; MQW device; broad spectral width; multiquantum well; superluminescent diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920082
  • Filename
    118926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1165522