• DocumentCode
    1165578
  • Title

    Low threshold current density (760 A/cm2) and high power (45 mW) operation of strained Ga0.42In0.58P multiquantum well laser diodes emitting at 632 nm

  • Author

    Valster, A. ; van der Poel, C.J. ; Boermans, M.J.B.

  • Author_Institution
    Philips Optoelectron. Centre, Eindhoven, Netherlands
  • Volume
    28
  • Issue
    2
  • fYear
    1992
  • Firstpage
    144
  • Lastpage
    145
  • Abstract
    A record low threshold current density of 760 A/cm2 has been obtained for a compressively strained multiquantum well laser emitting at 632 nm. Narrow stripe gain guided lasers show a maximum continuous output power of 45 mW with normally passivated mirrors. Stable laser operation over more than 3000 h at 40 degrees C and 2 mW output power is reported for the first time.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; laser transitions; optical waveguides; semiconductor junction lasers; 2 mW; 3000 hr; 40 degC; 45 mW; 632 nm; Ga 0.42In 0.58P; compressively strained; continuous output power; high power operation; laser diodes; low threshold current density; multiquantum well; passivated mirrors; semiconductor lasers; strained MQW lasers; stripe gain guided lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920089
  • Filename
    118933
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1165578