Title :
High temperature (90 degrees C) CW operation of 646 nm InGaAlP laser containing multiquantum barrier
Author :
Rennie, J. ; Watanabe, Manabu ; Okajima, M. ; Hatakoshi, G.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
CW laser operation of a 646 nm InGaAlP laser, incorporating a multiquantum barrier (MQB), is shown for the first time. The maximum temperature of operation was raised by 20 degrees C, in comparison to an identical laser without an MQB layer to 90 degrees C. This increase is taken as direct evidence of the authenticity of the MQB effect.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; 646 nm; 90 degC; CW operation; InGaAlP laser; MQB layer; high temperature operation; multiquantum barrier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920093
