Collector offset voltage of heterojunction bipolar transistors grown by molecular beam epitaxy

Author

Won, T. ; Iyer, S. ; Agarwala, S. ; Morkoc, Hadis

Author_Institution

Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA

Volume

10

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

274

Lastpage

276

Abstract

The collector-emitter offset voltages of InAlAs/InGaAs heterojunction bipolar transistors grown by molecular-beam epitaxy are discussed. Both the difference between emitter and collector areas and electrical asymmetry between emitter and collector junctions in these mesa-isolated transistors account for the offset voltages observed. Devices exhibited offset voltages in the range of 50-300 mV, depending on the structures and device sizes. Several electrical and geometrical factors affecting the offset voltage are discussed in detail.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor device models; 50 to 300 mV; HBT; InAlAs-InGaAs; MBE; collector area; collector junctions; collector-emitter offset voltages; electrical asymmetry; electrical factors; emitter area; emitter junction; geometrical factors; heterojunction bipolar transistors; mesa-isolated transistors; models; molecular beam epitaxy; semiconductors; Bipolar transistors; Equations; Fabrication; Gold; Heterojunction bipolar transistors; Integrated circuit noise; Logic circuits; Low voltage; Microwave devices; Molecular beam epitaxial growth;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31744

Filename

31744