DocumentCode
1165640
Title
DFB-LD/modulator integrated light source by bandgap energy controlled selective MOVPE
Author
Kato, Toshihiko ; Sasaki, T. ; Komatsu, Kazuhiko ; Mito, I.
Author_Institution
Opto. Electron. Res. Labs., NEC Corp., Kanagawa, Japan
Volume
28
Issue
2
fYear
1992
Firstpage
153
Lastpage
154
Abstract
The bandgap energy of an In-InP multiquantum well structure, selectively grown by MOVPE, was controlled along the waveguide direction by controlling the mask stripe width A butt-jointless DFB-LD/modulator light source was fabricated by using this technique.
Keywords
distributed feedback lasers; integrated optics; laser beam applications; light sources; optical modulation; optical waveguides; optical workshop techniques; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; DFB laser diode; DFB-LD/modulator; In-InP multiquantum well structure; InP-InGaAs-InGaAsP; MQW; bandgap energy controlled; butt-jointless configuration; integrated light source; mask stripe width; selective MOVPE; semiconductor lasers; waveguide;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920095
Filename
118939
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