• DocumentCode
    1165640
  • Title

    DFB-LD/modulator integrated light source by bandgap energy controlled selective MOVPE

  • Author

    Kato, Toshihiko ; Sasaki, T. ; Komatsu, Kazuhiko ; Mito, I.

  • Author_Institution
    Opto. Electron. Res. Labs., NEC Corp., Kanagawa, Japan
  • Volume
    28
  • Issue
    2
  • fYear
    1992
  • Firstpage
    153
  • Lastpage
    154
  • Abstract
    The bandgap energy of an In-InP multiquantum well structure, selectively grown by MOVPE, was controlled along the waveguide direction by controlling the mask stripe width A butt-jointless DFB-LD/modulator light source was fabricated by using this technique.
  • Keywords
    distributed feedback lasers; integrated optics; laser beam applications; light sources; optical modulation; optical waveguides; optical workshop techniques; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; DFB laser diode; DFB-LD/modulator; In-InP multiquantum well structure; InP-InGaAs-InGaAsP; MQW; bandgap energy controlled; butt-jointless configuration; integrated light source; mask stripe width; selective MOVPE; semiconductor lasers; waveguide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920095
  • Filename
    118939