• DocumentCode
    1165734
  • Title

    {ssr HLS}\\hbox {-}{ssr pg} : High-Level Synthesis of Power-Gated Circuits

  • Author

    Choi, Eunjoo ; Shin, Changsik ; Shin, Youngsoo

  • Author_Institution
    Dept. of Electr. Eng., KAIST, Daejeon
  • Volume
    28
  • Issue
    3
  • fYear
    2009
  • fDate
    3/1/2009 12:00:00 AM
  • Firstpage
    451
  • Lastpage
    456
  • Abstract
    A problem inherent in power-gated circuits is the overhead of state-retention storage required to preserve the circuit state in standby mode.HLS-pg is a new design framework that takes power gating into account, from scheduling, allocation, and controller synthesis to the final circuit layout. Its main feature is a new scheduler that minimizes the number of retention registers required at the power-gating control step. In experiments on benchmark designs implemented in 0.9-V 65-nm technology, HLS-pg reduced leakage current by 20.7% on average, with 5.0% less area and 4.1% less wirelength, compared to the power-gated circuits produced by conventional high-level synthesis.
  • Keywords
    leakage currents; power semiconductor devices; -retention storage; final circuit layout; power-gated circuits; reduced leakage current; High-level synthesis; leakage; power gating;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/TCAD.2009.2013283
  • Filename
    4785348