DocumentCode :
1165734
Title :
{ssr HLS}\\hbox {-}{ssr pg} : High-Level Synthesis of Power-Gated Circuits
Author :
Choi, Eunjoo ; Shin, Changsik ; Shin, Youngsoo
Author_Institution :
Dept. of Electr. Eng., KAIST, Daejeon
Volume :
28
Issue :
3
fYear :
2009
fDate :
3/1/2009 12:00:00 AM
Firstpage :
451
Lastpage :
456
Abstract :
A problem inherent in power-gated circuits is the overhead of state-retention storage required to preserve the circuit state in standby mode.HLS-pg is a new design framework that takes power gating into account, from scheduling, allocation, and controller synthesis to the final circuit layout. Its main feature is a new scheduler that minimizes the number of retention registers required at the power-gating control step. In experiments on benchmark designs implemented in 0.9-V 65-nm technology, HLS-pg reduced leakage current by 20.7% on average, with 5.0% less area and 4.1% less wirelength, compared to the power-gated circuits produced by conventional high-level synthesis.
Keywords :
leakage currents; power semiconductor devices; -retention storage; final circuit layout; power-gated circuits; reduced leakage current; High-level synthesis; leakage; power gating;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.2009.2013283
Filename :
4785348
Link To Document :
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