Characteristics of MOCVD-grown thin p-clad InGaAs quantum-dot lasers

Author

Lever, P. ; Buda, M. ; Tan, H.H. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

Volume

16

Issue

12

fYear

2004

Firstpage

2589

Lastpage

2591

Abstract

Thin p-clad quantum-dot lasers grown by metal-organic chemical vapor deposition are fabricated and shown to lase in ground state for device lengths greater than 2.5 mm. The device characteristics are presented and the modal behavior is investigated. The threshold current density is found to be much larger for narrow (4 μm) stripe width devices than expected from the wider (50 μm) stripe width devices. This is attributed to gain saturation within the devices.

Keywords

III-V semiconductors; MOCVD; claddings; gallium arsenide; ground states; indium compounds; optical fabrication; optical saturation; quantum dot lasers; semiconductor growth; 4 mum; 50 mum; InGaAs; InGaAs quantum dot lasers; MOCVD; gain saturation; ground state lasing; metal-organic chemical vapor deposition; modal behavior; narrow stripe width devices; thin p-clad quantum dot lasers; threshold current density; Chemical vapor deposition; Gallium arsenide; Gold; Indium gallium arsenide; MOCVD; Quantum dot lasers; Stationary state; Threshold current; Vertical cavity surface emitting lasers; Waveguide lasers; InGaAs; quantum dot (QD); semiconductor laser;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.836351

Filename

1359920