DocumentCode
1166135
Title
High-performance optical modulator with a wide center electrode and thin x-cut LiNbO3 substrate
Author
Aoki, K. ; Jungo Kondo ; Kondo, A. ; Mori, T. ; Mizuno, Y. ; Shimodaira, S. ; Imaeda, M. ; Kozuka, Y. ; Mitomi, O. ; Minakata, M.
Author_Institution
NGK Insulators, Nagoya, Japan
Volume
16
Issue
12
fYear
2004
Firstpage
2610
Lastpage
2612
Abstract
We propose an excellent large-bandwidth back-slot lithium niobate (LN) modulator with a wide center electrode of typically 50 μm or wider and relatively thin electrodes. From the calculation, a modulator with a 3-dBe bandwidth of 34 GHz and a half-wave voltage of 2.0 V for a 50-/spl Omega/ characteristic impedance system was realized theoretically. This means when their half-wave voltages are identical, by applying a wider electrode, the modulator bandwidth becomes 2.6 times larger than that of a conventional one. We also confirmed experimentally that the wide center electrode structure is effective for back-slot LN modulators.
Keywords
coplanar waveguides; electro-optical modulation; electrodes; finite element analysis; lithium compounds; optical planar waveguides; 2.0 V; 34 GHz; 50 ohm; LiNbO/sub 3/; back-slot lithium niobate modulator; coplanar waveguide; finite element method; high-performance optical modulator; impedance system; thin electrode; thin x-cut LiNbO/sub 3/ substrate; traveling-wave devices; wide center electrode; wide center electrode structure; wide central electrode; Bandwidth; Electrodes; Finite element methods; High speed optical techniques; Impedance; Optical buffering; Optical modulation; Optical waveguides; Structural engineering; Voltage; Colplanar waveguides; electrooptical modulation; finite element methods; optical modulation; traveling-wave devices;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2004.836358
Filename
1359927
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