High-speed electroabsorption modulators buried with ruthenium-doped SI-InP

Author

Tamura, Munehisa ; Yamanaka, Takayuki ; Fukano, Hideki ; Akage, Yuichi ; Kondo, Yasuhiro ; Saitoh, Tadashi

Author_Institution

NTT Photonics Labs., NTT Corp., Kanagawa, Japan

Volume

16

Issue

12

fYear

2004

Firstpage

2613

Lastpage

2615

Abstract

InGaAlAs-InAlAs electroabsorption modulators are successfully fabricated using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison of measured and calculated microwave characteristics reveals that there is no additional microwave loss because zinc diffusion is inhibited by the use of Ru-doped SI-InP layers. A small-signal electrooptical response with a -3-dB electrical bandwidth of over 50 GHz is demonstrated.

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; indium compounds; microwave photonics; optical communication equipment; optical fabrication; ruthenium; semiconductor quantum wells; InGaAlAs-InAlAs; InGaAlAs-InAlAs electroabsorption modulators; InP:Ru; high-speed electroabsorption modulators; microwave characteristics; microwave loss; multiple quantum wells; ruthenium-doped semiinsulating-InP; semiinsulating-InP burying technology; small-signal electrooptical response; zinc diffusion; Bandwidth; High speed optical techniques; Indium phosphide; Loss measurement; Microwave devices; Microwave measurements; Optical losses; Optical modulation; Quantum well devices; Zinc; Electroabsorption (EA) modulators; multiple quantum well (MQW); optical communication; ruthenium (Ru); semi-insulating (SI) InP;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.836354

Filename

1359928