DocumentCode :
1166314
Title :
Widely Tunable GaSb-Based External Cavity Diode Laser Emitting Around 2.3 
m
mAuthor :
Geerlings, E. ; Rattunde, M. ; Schmitz, J. ; Kaufel, G. ; Zappe, H. ; Wagner, J.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg
Volume :
18
Issue :
18
fYear :
2006
Firstpage :
1913
Lastpage :
1915
Abstract :
We report on a widely tunable external cavity GaSb-based diode laser (ECL) in Littrow-configuration. The low (44deg full-width at half-maximum) fast axis beam divergence of the quantum-well diode laser employed allowed an efficient coupling to the external cavity, which resulted in a wide tuning range of 177 nm around the central emission wavelength of 2.30 mum. The maximum output power of the fiber coupled ECL system varied only moderately between 16.5 mW at 2.23 mum and 9 mW at the long-wavelength limit at 2.39 mum
Keywords :
gallium compounds; laser beams; laser cavity resonators; laser tuning; semiconductor lasers; 2.23 to 2.39 mum; 9 to 16.5 mW; GaSb; GaSb-based external cavity diode laser; beam divergence; fiber couplers; laser tuning; quantum-well diode laser; Diode lasers; Gas lasers; Laser beams; Laser tuning; Optical coupling; Optical design; Optical fibers; Optical waveguides; Tunable circuits and devices; Waveguide lasers; External cavity; GaSb; fiber coupled; infrared diode laser; tuning range;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2006.881658
Filename :
1683845
Link To Document :
