DocumentCode
1166391
Title
Optically Modulated High-Sensitivity Heterostructure Varactor
Author
Zhao, Xia ; Cola, Adriano ; Tersigni, Andrea ; Quaranta, Fabio ; Gallo, Eric ; Spanier, Jonathan E. ; Nabet, Bahram
Author_Institution
Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA
Volume
27
Issue
9
fYear
2006
Firstpage
710
Lastpage
712
Abstract
A novel optically modulated high-sensitivity heterostructure varactor, demonstrated as a strong candidate for high-order frequency-multiplier applications, is reported. The device is a delta modulation-doped heterostructure of AlGaAs/GaAs with two Schottky contacts on the top. The capacitance-voltage (C-V) measurements show a C max/Cmin ratio up to 113 and an extremely high nonlinearity during the transition from high to low capacitance with sensitivity of up to 35. These results are one of the best obtained so far among similar structure devices. In addition, optoelectronic experimental results demonstrate that the slope of the C-V relationship can be modulated by the intensity of the incident optical power. A model describing the source of the reported C-V results is proposed along with the simulation results verifying the observed C-V behavior
Keywords
III-V semiconductors; Schottky barriers; aluminium compounds; frequency multipliers; gallium arsenide; metal-semiconductor-metal structures; two-dimensional hole gas; varactors; 2D-hole-gas; AlGaAs-GaAs; Schottky contacts; capacitance-voltage measurements; heterostructure-barrier-varactor; high-order frequency-multiplier; high-sensitivity heterostructure varactor; incident optical power; metal-semiconductor-metal; modulation-doped heterostructure; structure devices; Capacitance measurement; Capacitance-voltage characteristics; Epitaxial layers; Frequency; Gallium arsenide; Intensity modulation; Optical modulation; Optical sensors; Schottky barriers; Varactors; Frequency multiplier; heterostructure-barrier-varactor (HBV); metal–semiconductor–metal (MSM); optical modulation; two-dimensional-hole-gas (2-DHG);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2006.880637
Filename
1683854
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