• DocumentCode
    1166391
  • Title

    Optically Modulated High-Sensitivity Heterostructure Varactor

  • Author

    Zhao, Xia ; Cola, Adriano ; Tersigni, Andrea ; Quaranta, Fabio ; Gallo, Eric ; Spanier, Jonathan E. ; Nabet, Bahram

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA
  • Volume
    27
  • Issue
    9
  • fYear
    2006
  • Firstpage
    710
  • Lastpage
    712
  • Abstract
    A novel optically modulated high-sensitivity heterostructure varactor, demonstrated as a strong candidate for high-order frequency-multiplier applications, is reported. The device is a delta modulation-doped heterostructure of AlGaAs/GaAs with two Schottky contacts on the top. The capacitance-voltage (C-V) measurements show a C max/Cmin ratio up to 113 and an extremely high nonlinearity during the transition from high to low capacitance with sensitivity of up to 35. These results are one of the best obtained so far among similar structure devices. In addition, optoelectronic experimental results demonstrate that the slope of the C-V relationship can be modulated by the intensity of the incident optical power. A model describing the source of the reported C-V results is proposed along with the simulation results verifying the observed C-V behavior
  • Keywords
    III-V semiconductors; Schottky barriers; aluminium compounds; frequency multipliers; gallium arsenide; metal-semiconductor-metal structures; two-dimensional hole gas; varactors; 2D-hole-gas; AlGaAs-GaAs; Schottky contacts; capacitance-voltage measurements; heterostructure-barrier-varactor; high-order frequency-multiplier; high-sensitivity heterostructure varactor; incident optical power; metal-semiconductor-metal; modulation-doped heterostructure; structure devices; Capacitance measurement; Capacitance-voltage characteristics; Epitaxial layers; Frequency; Gallium arsenide; Intensity modulation; Optical modulation; Optical sensors; Schottky barriers; Varactors; Frequency multiplier; heterostructure-barrier-varactor (HBV); metal–semiconductor–metal (MSM); optical modulation; two-dimensional-hole-gas (2-DHG);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.880637
  • Filename
    1683854