High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

Author

Dora, Y. ; Chakraborty, A. ; McCarthy, L. ; Keller, S. ; DenBaars, S.P. ; Mishra, U.K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA

Volume

27

Issue

9

fYear

2006

Firstpage

713

Lastpage

715

Abstract

A self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs. Devices were tested in Fluorinert to eliminate the breakdown of air, which was identified to limit the breakdown voltage in AlGaN/GaN HEMTs. A single integrated field plate, which is self-aligned with the gate, is shown to support more than a kilovolt breakdown voltage (V_br up to 1900 V was measured with Fluorinert). Devices made with this technology show a good large signal-frequency behavior. Various issues regarding breakdown measurements and interpretation of measurement results are presented

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device breakdown; semiconductor device measurement; semiconductor device testing; wide band gap semiconductors; AlGaN-GaN; Fluorinert; breakdown measurements; discrete multiple field plates; high breakdown voltage; high electron mobility transistor; integrated slant field plates; large signal-frequency behavior; semiconductor device testing; Aluminum gallium nitride; Dielectrics; Electric breakdown; Etching; Gallium nitride; HEMTs; Lithography; MODFETs; Passivation; Silicon compounds; Breakdown voltage; GaN; field plate; high electron mobility transistor (HEMT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.881020

Filename

1683855