• DocumentCode
    1166425
  • Title

    A Capless \\hbox {InP/}\\hbox {In}_{0.52}\\hbox {Al}_{0.48}\\hbox {As/}\\hbox {In}_{0.53}\\hbox {Ga}_{0.47}\\hbox {As} p-HEMT Having a Self-Aligned Gate Structure

  • Author

    Kim, Tae-Woo ; Jo, Seong June ; Song, Jong-In

  • Author_Institution
    Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol.
  • Volume
    27
  • Issue
    9
  • fYear
    2006
  • Firstpage
    722
  • Lastpage
    724
  • Abstract
    Characteristics of a 0.2-mum capless InAlAs/InGaAs pseudomorphic high electron mobility transistor (p-HEMT) having a self-aligned gate (SAG) were investigated. The 0.2-mum SAG capless p-HEMT showed a source resistance comparable to that of a conventional recessed p-HEMT having a heavily n-doped In0.53Ga0.47As cap layer primarily due to the SAG and optimized ohmic-metallization processes and excellent characteristics of Gm,max, fT, and fmax of 1.12 S/mm, 185 GHz, and 225 GHz, respectively, even without a heavily doped InGaAs cap layer. The capless device exhibited much better device parameters for digital logic applications including I ON/IOFF and subthreshold slope (1.27times104 and 78 mV/dec) compared with those (5.1times103 and 120 mV/dec) of the conventional recessed device, respectively
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; logic gates; semiconductor device metallisation; semiconductor doping; 0.2 micron; InP-In0.52Al0.48As-In0.53Ga 0.47As; capless p-HEMT; capless pseudomorphic high electron mobility transistor; digital logic applications; optimized ohmic-metallization processes; self-aligned gate structure; semiconductor doping; Electron mobility; Etching; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Information technology; MODFETs; PHEMTs; Capless p-HEMT; gate recess; pseudomorphic high electron mobility transistor (p-HEMT); self-aligned gate (SAG); subthreshold slope;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.881114
  • Filename
    1683858
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1166425