Drive-Current Enhancement in Ge n-Channel MOSFET Using Laser Annealing for Source/Drain Activation

Author

Zhang, Qingchun ; Huang, Jidong ; Wu, Nan ; Chen, Guoxin ; Hong, Minghui ; Bera, L.K. ; Zhu, Chunxiang

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore

Volume

27

Issue

9

fYear

2006

Firstpage

728

Lastpage

730

Abstract

A gate-first self-aligned Ge nMOSFET with a metal gate and CVD HfO ₂ has been successfully fabricated using KrF laser annealing (LA) as dopant-activation annealing. By applying an aluminum laser reflector on TaN metal gate, source/drain (S/D) regions are selectively annealed without heating the gate stack. Small S/D resistance and good gate-stack integrity are achieved simultaneously. As a result, a larger drive current and a lower threshold voltage are achieved in Ge nMOSFET using LA activation than that using conventional rapid thermal annealing activation

Keywords

MOSFET; chemical vapour deposition; elemental semiconductors; hafnium compounds; high-k dielectric thin films; krypton compounds; laser beam annealing; tantalum compounds; HfO₂; KrF; TaN; aluminum laser reflector; chemical vapor depostion; dopant-activation annealing; drive-current enhancement; gate-stack integrity; germanium n-channel MOSFET; high-k gate dielectric; laser annealing; metal gate; source/drain activation; Aluminum; Dielectric devices; Dielectric substrates; Germanium; Hafnium oxide; Heating; MOS devices; MOSFET circuits; Rapid thermal annealing; Silicon; Germanium; MOSFET; high-; laser annealing (LA);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.880655

Filename

1683860