Enhanced Band-to-Band-Tunneling-Induced Hot-Electron Injection in p-Channel Flash by Band-gap Offset Modification

Author

Wang, Chi-Chao ; Chang-Liao, Kuei-Shu ; Lu, Chun-Yuan ; Wang, Tien-Ko

Author_Institution

Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu

Volume

27

Issue

9

fYear

2006

Firstpage

749

Lastpage

751

Abstract

A novel p-channel flash device with a SiGe layer is proposed, which is based on the analysis made with the simulator MEDICI, to enhance the band-to-band-tunneling current and improve the programming speed. The programming biases of the p-channel flash device can be reduced with an equal programming speed. Simulation results show that more than one hundred times enhancement in the programming speed or 35% reduction of the drain voltage can be achieved in the proposed p-channel flash device with a 40% Ge content in the surface SiGe layer. In addition, a Si-cap layer is inserted between the SiGe and the tunneling oxide to obtain a high-quality interface and to optimize the cell structure

Keywords

Ge-Si alloys; MOSFET; hot electron transistors; low-power electronics; semiconductor device models; semiconductor materials; tunnelling; Si-cap layer; SiGe; band-gap offset modification; band-to-band-tunneling current; cell structure optimization; hot-electron injection; p-channel flash device; surface layer; tunneling oxide; FETs; Germanium silicon alloys; MOSFET circuits; Medical simulation; Photonic band gap; Poisson equations; Secondary generated hot electron injection; Silicon germanium; Spontaneous emission; Tunneling; Band-to-band-tunneling-induced hot-electron (BBHE); SiGe; high programming speed; low-voltage operation; p-channel flash;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.880642

Filename

1683867