• DocumentCode
    1166542
  • Title

    HfSiON n-MOSFETs Using Low-Work Function \\hbox {HfSi}_{x} Gate

  • Author

    Wu, C.H. ; Hung, B.F. ; Chin, Albert ; Wang, S.J. ; Yen, F.Y. ; Hou, Y.T. ; Jin, Y. ; Tao, H.J. ; Chen, S.C. ; Liang, M.S.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
  • Volume
    27
  • Issue
    9
  • fYear
    2006
  • Firstpage
    762
  • Lastpage
    764
  • Abstract
    The authors have developed a novel high-temperature stable HfSi x gate for high-kappa HfSiON gate dielectric. After a 1000 degC RTA, the HfSix/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm2/Vmiddots at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines
  • Keywords
    MOSFET; VLSI; electron mobility; hafnium compounds; high-k dielectric thin films; rapid thermal annealing; silicon compounds; work function; 1.6 nm; 1000 C; 4.27 eV; HfSi-HfSiON; VLSI; electron mobility; equivalent oxide thickness; high-k gate dielectric; n-MOSFET; rapid thermal annealing; very large scale integration; work function; Amorphous materials; CMOS technology; Dielectrics; Electron mobility; Fabrication; Hafnium; Ion implantation; MOS capacitors; MOSFET circuits; Very large scale integration; HfSi; HfSiON; n-MOSFETs;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.880659
  • Filename
    1683871
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1166542