DocumentCode :
1166542
Title :
HfSiON n-MOSFETs Using Low-Work Function 
Gate
GateAuthor :
Wu, C.H. ; Hung, B.F. ; Chin, Albert ; Wang, S.J. ; Yen, F.Y. ; Hou, Y.T. ; Jin, Y. ; Tao, H.J. ; Chen, S.C. ; Liang, M.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
Volume :
27
Issue :
9
fYear :
2006
Firstpage :
762
Lastpage :
764
Abstract :
The authors have developed a novel high-temperature stable HfSi x gate for high-kappa HfSiON gate dielectric. After a 1000 degC RTA, the HfSix/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm2/Vmiddots at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines
Keywords :
MOSFET; VLSI; electron mobility; hafnium compounds; high-k dielectric thin films; rapid thermal annealing; silicon compounds; work function; 1.6 nm; 1000 C; 4.27 eV; HfSi-HfSiON; VLSI; electron mobility; equivalent oxide thickness; high-k gate dielectric; n-MOSFET; rapid thermal annealing; very large scale integration; work function; Amorphous materials; CMOS technology; Dielectrics; Electron mobility; Fabrication; Hafnium; Ion implantation; MOS capacitors; MOSFET circuits; Very large scale integration; HfSi; HfSiON; n-MOSFETs;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.880659
Filename :
1683871
Link To Document :
