• DocumentCode
    1166572
  • Title

    RF Split Capacitance–Voltage Measurements of Short-Channel and Leaky MOSFET Devices

  • Author

    Andrés, E. San ; Pantisano, L. ; Ramos, J. ; Severi, S. ; Trojman, L. ; De Gendt, S. ; Groeseneken, G.

  • Author_Institution
    Complutense Univ., Madrid
  • Volume
    27
  • Issue
    9
  • fYear
    2006
  • Firstpage
    772
  • Lastpage
    774
  • Abstract
    In this letter, the feasibility of split-capacitance-voltage (C-V) measurements in the RF range is demonstrated. These RF/split-C-V measurements show excellent agreement with the values obtained by the low-frequency conventional technique but without presenting any noticeable degradation due to gate leakage
  • Keywords
    MOSFET; capacitance measurement; dielectric thin films; voltage measurement; RF split capacitance-voltage measurements; RF split-C-V measurements; capacitance measurement; leaky MOSFET devices; low-frequency technique; short-channel devices; ultra-thin gate dielectric; Capacitance measurement; Degradation; Dielectric measurements; Frequency measurement; Gate leakage; Helium; MOSFET circuits; Microelectronics; Radio frequency; Voltage measurement; Capacitance measurement; MOSFET; RF; ultrathin gate dielectric;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.881089
  • Filename
    1683874
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1166572