Title :
Room-Temperature Low-Dimensional Effects in Pi-Gate SOI MOSFETs
Author :
Colinge, J.P. ; Xiong, Weize ; Cleavelin, C.R. ; Schulz, T. ; Schrüfer, K. ; Matthews, K. ; Patruno, P.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA
Abstract :
Evidence of a one-dimensional subband formation is found in Pi-gate SOI MOSFETs at room temperature as oscillations are found in the ID(VG) characteristics. These oscillations correspond to an intersubband scattering. Even though the height-to-width ratio of the silicon fins is equal to five, the device behavior is better described by a one-dimensional semiconductor theory than by a two-dimensional gas model
Keywords :
MOSFET; oscillations; quantum wires; scattering; semiconductor device measurement; silicon-on-insulator; 1D semiconductor theory; 2D gas model; Pi-Gate MOSFET; intersubband scattering; oscillations; quantum wires; semiconductor device measurements; silicon fins; silicon-on-insulator; Electrons; Etching; Lithography; MOSFETs; Particle scattering; Semiconductor device measurement; Semiconductor device modeling; Silicon on insulator technology; Temperature; Wires; MOSFETs; quantum wires; semiconductor device measurements; silicon-on-insulator (SOI) technology;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.881086
