Characterization of optical nonlinearity in semiconductor photodiodes using cross-polarized autocorrelation

Author

Santran, Stéphane ; Martínez-Rosas, Miguel E. ; Canioni, Lionel ; Sarger, Laurent

Author_Institution

Univ. Bordeaux, Talence, France

Volume

40

Issue

12

fYear

2004

Firstpage

1687

Lastpage

1694

Abstract

We study the various nonlinear effects produced during the detection of high-intensity signals in semiconductor photodiodes. Experimental results on few commercial detectors are compared with theoretical analysis. This analysis is based on the tensor coefficients from second- and third-order optical nonlinearities. Both contributions are measured using collinear orthogonally polarized beams in a pump-probe setup. The photoelectric signal is obtained for several orientations of the crystal optic axis.

Keywords

light interferometry; light polarisation; nonlinear optical susceptibility; optical correlation; optical harmonic generation; optical polarisers; photodetectors; photodiodes; semiconductor device measurement; two-photon processes; collinear orthogonally polarized beams; cross-polarized autocorrelation; crystal optic axis; high-intensity signal detection; interferometric autocorrelation; nonlinear effects; optical nonlinearity characterization; photoelectric signal; pump-probe setup; second harmonic generation; second-order optical nonlinearities; semiconductor photodiodes; tensor coefficients; third-order optical nonlinearities; two-photon absorption; Autocorrelation; Nonlinear optics; Optical harmonic generation; Optical pumping; Optical refraction; Optical saturation; Optical variables control; Photodiodes; Photonic band gap; Ultrafast optics; 65; Interferometric autocorrelation; SHG; TPA; nonlinear susceptibility; second-harmonic generation; two-photon absorption;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2004.836810

Filename

1359976