Title :
Quasi-direct UV/blue GaP avalanche photodetectors
Author :
Beck, Ariane L. ; Yang, Bo ; Wang, S. ; Collins, Charles J. ; Campbell, Joe C. ; Yulius, Aristo ; Chen, An ; Woodall, Jerry M.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA
Abstract :
GaP avalanche photodiodes, with thin device layers have been processed, utilizing both p-i-n and recessed window p-i-n structures, as well as a Schottky structure. The results showed low dark currents, good quantum efficiency (QE), and high gains up to 103, with good uniformity across the wafer. The peak QE at 440 nm indicated Γ-valley absorption, rather than band-edge absorption. The recess window photodiodes exhibited enhanced UV detection as a result of reduced absorption and recombination in the undepleted p-layer. Additionally, the Schottky structure demonstrated potential for further enhanced UV detection, by employing a thin semitransparent contact.
Keywords :
III-V semiconductors; Schottky barriers; avalanche photodiodes; dark conductivity; gallium compounds; p-i-n photodiodes; photodetectors; ultraviolet detectors; Γ-valley absorption; 440 nm; GaP; GaP avalanche photodetectors; GaP avalanche photodiodes; Schottky structure; UV detection; dark currents; optical gains; p-i-n structures; quantum efficiency; quasidirect UV/blue photodetectors; recess window photodiodes; recessed window p-i-n structures; recombination; reduced absorption; thin device layers; thin semitransparent contact; undepleted p-layer; Aluminum gallium nitride; Avalanche breakdown; Costs; Dark current; Electromagnetic wave absorption; Gallium nitride; PIN photodiodes; Photodetectors; Semiconductor device noise; Silicon carbide; 65; Avalanche photodiodes; photodetectors; ultraviolet;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2004.837788
