Title :
Photonic Crystal Nanobeam Cavity With Stagger Holes for Ultrafast Directly Modulated Nano-Light-Emitting Diodes
Author :
Yongzhuo Li ; Kaiyu Cui ; Xue Feng ; Yidong Huang ; Da Wang ; Zhilei Huang ; Wei Zhang
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
Abstract :
A photonic crystal nanobeam cavity with stagger holes in InP/InGaAsP/InP heterostructure is proposed for ultrafast directly modulated nano-light-emitting diodes (nanoLEDs). With stagger holes, the quality factor Q can be engineered in the range of 102 ~ 104 while keeping a small mode volume (Veff). As a result, the modulation speed of nanoLEDs can be dramatically improved by a small Veff to enhanced spontaneous emission (SpE) rate and a moderate Q to counterbalance SpE lifetime and photon lifetime of the cavity. In our simulation, the direct modulation bandwidth could be higher than 60 GHz with optimal Q value of 2150 and Veff of 2.3( λ0/2n)3.
Keywords :
III-V semiconductors; Q-factor; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; light emitting diodes; microcavities; nanophotonics; optical modulation; photonic crystals; spontaneous emission; InP-InGaAsP-InP; SpE lifetime; direct modulation bandwidth; nanoLED; photon lifetime; photonic crystal nanobeam cavity; quality factor; small mode volume; spontaneous emission; stagger holes; ultrafast directly modulated nanolight-emitting diodes; Bandwidth; Cavity resonators; Indium phosphide; Modulation; Optimized production technology; Photonic crystals; Photonics; Photonic crystals; light-emitting diodes (LEDs); nanocavities;
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2013.2240289
