Title :
43 Gbit/s automatic gain control amplifier based on InP SHBT technology
Author :
Ho, Min-Chung ; Guinn, K. ; Lao, Zhihao ; Lee, Shing ; Yu, M. ; Xu, Mu-Lang ; Radisic, V. ; Wang, K.C.
Author_Institution :
Adv. Product Dev. Center (APC), OpNext Inc., Thousand Oaks, CA, USA
fDate :
3/6/2003 12:00:00 AM
Abstract :
A high bandwidth automatic-gain-control (AGC) amplifier has been designed and characterised. Fabricated in InP single-heterojunction-bipolar transistor (SHBT) technology, the measured bandwidth of the amplifier is 36 GHz with maximum small signal gain 22 dB. Capable of operating at 43 Gbit/s, this is believed to be the fastest AGC amplifier reported to date.
Keywords :
III-V semiconductors; automatic gain control; heterojunction bipolar transistors; indium compounds; wideband amplifiers; 22 dB; 36 GHz; 43 Gbit/s; InP; InP single heterojunction bipolar transistor; bandwidth; high-speed automatic gain control amplifier; small-signal gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030293
