DocumentCode :
1166870
Title :
A 32-KB Standard CMOS Antifuse One-Time Programmable ROM Embedded in a 16-bit Microcontroller
Author :
Cha, Youk-Kyu ; Yun, Ilhyun ; Kim, Jinbong ; So, Byeong-Cheol ; Chun, Kanghyup ; Nam, Ilku ; Lee, Kwyro
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Energy Res. Inst., Daejeon
Volume :
41
Issue :
9
fYear :
2006
Firstpage :
2115
Lastpage :
2124
Abstract :
A 32-KB standard CMOS antifuse one-time programmable (OTP) ROM embedded in a 16-bit microcontroller as its program memory is designed and implemented in 0.18-mum standard CMOS technology. The proposed 32-KB OTP ROM cell array consists of 4.2 mum2 three-transistor (3T) OTP cells where each cell utilizes a thin gate-oxide antifuse, a high-voltage blocking transistor, and an access transistor, which are all compatible with standard CMOS process. In order for high density implementation, the size of the 3T cell has been reduced by 80% in comparison to previous work. The fabricated total chip size, including 32-KB OTP ROM, which can be programmed via external I 2C master device such as universal I2C serial EEPROM programmer, 16-bit microcontroller with 16-KB program SRAM and 8-KB data SRAM, peripheral circuits to interface other system building blocks, and bonding pads, is 9.9 mm2. This paper describes the cell, design, and implementation of high-density CMOS OTP ROM, and shows its promising possibilities in embedded applications
Keywords :
CMOS integrated circuits; SRAM chips; embedded systems; microcontrollers; programmable circuits; read-only storage; 0.18 micron; 16 bit; 16 kbit; 32 kbit; 8 kbit; CMOS OTP ROM; CMOS antifuse; OTP ROM cell array; data SRAM; gate-oxide antifuse; high-voltage blocking transistor; microcontroller; one-time programmable ROM; peripheral circuits; program SRAM; CMOS process; CMOS technology; Circuits; EPROM; Electric breakdown; Microcontrollers; Nonvolatile memory; PROM; Random access memory; Read only memory; CMOS OTP; CMOS antifuse; OTP ROM; embedded PROM; gate-oxide breakdown; microcontroller; nonvolatile memory;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2006.880603
Filename :
1683903
Link To Document :
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