Title :
Adaptive Multi-Band Multi-Mode Power Amplifier Using Integrated Varactor-Based Tunable Matching Networks
Author :
Neo, W. C Edmund ; Lin, Yu ; Liu, Xiao-Dong ; De Vreede, Leo C N ; Larson, Lawrence E. ; Spirito, Marco ; Pelk, Marco J. ; Buisman, Koen ; Akhnoukh, Atef ; De Graauw, Anton ; Nanver, Lis K.
Author_Institution :
Delft Univ. of Technol.
Abstract :
This paper presents a multi-band multi-mode class-AB power amplifier, which utilizes continuously tunable input and output matching networks integrated in a low-loss silicon-on-glass technology. The tunable matching networks make use of very high Q varactor diodes (Q>100 @ 2 GHz) in a low distortion anti-series configuration to achieve the desired source and load impedance tunability. A QUBIC4G (SiGe, ft=50 GHz) high voltage breakdown transistor (VCBO=14 V, VCEO>3.6 V) is used as active device. The realized adaptive amplifier provides 13 dB gain, 27-28 dBm output power at the 900, 1800, 1900 and 2100 MHz bands. For the communication bands above 1 GHz optimum load adaptation is facilitated resulting in efficiencies between 30%-55% over a 10 dB output power control range. The total chip area (including matching networks) of the amplifier is 8 mm2
Keywords :
Ge-Si alloys; UHF power amplifiers; circuit tuning; varactors; 13 dB; 14 V; 2 GHz; 50 GHz; 900 to 2100 MHz; SiGe; adaptive multiband power amplifier; class-AB power amplifier; high voltage breakdown transistor; load impedance tunability; multimode power amplifier; silicon-on-glass technology; varactor diodes; varactor-based tunable matching networks; Communication system control; Dielectric breakdown; Diodes; Gain; Germanium silicon alloys; Impedance matching; Power amplifiers; Power generation; Silicon germanium; Varactors; Adaptive matching network; RF adaptivity; dynamic loadline; high efficiency; multi-band; multi-mode; power amplifier;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2006.880586
