Bipolar Microwave RMS Power Detectors

Author

Zhang, Tao ; Eisenstadt, William R. ; Fox, Robert M. ; Yin, Qizhang

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL

Volume

41

Issue

9

fYear

2006

Firstpage

2188

Lastpage

2192

Abstract

A peak/RMS power detector with ges40 dB dynamic range is presented. The simulated frequency response is flat to 60GHz and the measured response is flat to 20 GHz. Analysis shows that the Meyer detector, originally developed as a peak detector, can be used for RMS detection with an error less than 0.5dB over an approximately 20 dB range, comparable to the popular RF/microwave diode detector. The range for RMS detection is extended by cascading several stages of attenuators and detectors, leading to a circuit suitable for applications such as embedded RFIC test. The power detector is only 700times550 mum² including all AC and DC bond pads

Keywords

bipolar integrated circuits; built-in self test; detector circuits; frequency response; microwave integrated circuits; 20 GHz; 60 GHz; RF diode detector; bipolar RMS power detectors; bipolar transistors; built-in-self test; frequency response; microwave RMS power detectors; microwave diode detector; peak detector; radiofrequency integrated circuits; Bandwidth; Bipolar transistors; Circuit testing; Dynamic range; Electromagnetic measurements; Envelope detectors; Power measurement; Schottky diodes; Semiconductor diodes; Thermal resistance; Bipolar; RMS; RMS power detector; bipolar transistor; built-in-self test; detector; embedded test; peak; peak detector; power;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2006.880592

Filename

1683910