DocumentCode
1167201
Title
Power Semiconductor Devices for Hybrid Breakers
Author
Holroyd, F.W. ; Temple, V.A.K.
Author_Institution
General Electric Company Corporate Research and Development
Issue
7
fYear
1982
fDate
7/1/1982 12:00:00 AM
Firstpage
2103
Lastpage
2108
Abstract
In order to survive the stresses inherent in opening mechanical circuit breakers under high power fault conditions, such breakers have traditionally been extremely large, rugged, and expensive. It is the purpose of this paper to examine the possible role of semiconductor technology in reducing the requirements of such a breaker, with a view to achieving considerable savings in its construction, improvement in performance, and possibly new capabilities. In particular we will describe the development and first device results of a giant phototransistor to be used as the basic semiconductor component of a hybrid breaker.
Keywords
Circuit breakers; Circuit faults; Electrodes; Fault currents; Fault detection; Power semiconductor devices; Semiconductor devices; Stress; Switches; Switchgear;
fLanguage
English
Journal_Title
Power Apparatus and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0018-9510
Type
jour
DOI
10.1109/TPAS.1982.317427
Filename
4111566
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