• DocumentCode
    1167201
  • Title

    Power Semiconductor Devices for Hybrid Breakers

  • Author

    Holroyd, F.W. ; Temple, V.A.K.

  • Author_Institution
    General Electric Company Corporate Research and Development
  • Issue
    7
  • fYear
    1982
  • fDate
    7/1/1982 12:00:00 AM
  • Firstpage
    2103
  • Lastpage
    2108
  • Abstract
    In order to survive the stresses inherent in opening mechanical circuit breakers under high power fault conditions, such breakers have traditionally been extremely large, rugged, and expensive. It is the purpose of this paper to examine the possible role of semiconductor technology in reducing the requirements of such a breaker, with a view to achieving considerable savings in its construction, improvement in performance, and possibly new capabilities. In particular we will describe the development and first device results of a giant phototransistor to be used as the basic semiconductor component of a hybrid breaker.
  • Keywords
    Circuit breakers; Circuit faults; Electrodes; Fault currents; Fault detection; Power semiconductor devices; Semiconductor devices; Stress; Switches; Switchgear;
  • fLanguage
    English
  • Journal_Title
    Power Apparatus and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9510
  • Type

    jour

  • DOI
    10.1109/TPAS.1982.317427
  • Filename
    4111566