Numerical analysis of the frequency-dependent output conductance of GaAs MESFET´s

Author

Lo, Shih-Hsien ; Lee, Chien-Ping

Author_Institution

Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan

Volume

38

Issue

8

fYear

1991

fDate

8/1/1991 12:00:00 AM

Firstpage

1693

Lastpage

1700

Abstract

The small-signal output conductance of GaAs MESFETs on semi-insulating substrate is studied using two-dimensional numerical analysis. Frequency-, temperature-, and drain-bias-dependent behaviours of the output conductance are analysed. It is confirmed that the bulk EL2 traps contribute significantly to the low-frequency-dependent behavior of the output conductance. Devices with different background trap concentrations and acceptor concentrations were analyzed and compared. For devices with higher trap concentrations, the output conductance is lower but exhibits stronger frequency dependence

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; numerical analysis; semiconductor device models; 2D model; GaAs; MESFETs; acceptor concentrations; background trap concentrations; bulk EL2 traps; drain bias dependence; frequency dependence; frequency-dependent output conductance; low-frequency-dependent behavior; semi-insulating substrate; semiconductors; small-signal output conductance; temperature dependence; two-dimensional numerical analysis; Current density; Electron emission; Electron traps; Frequency dependence; Gallium arsenide; Kelvin; MESFETs; Numerical analysis; Radioactive decay; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.119003

Filename

119003