• DocumentCode
    1167430
  • Title

    Thyristor Devices for Electric Power Systems

  • Author

    Temple, V.A.K.

  • Author_Institution
    General Electric Company Corporate Research and Development Center
  • Issue
    7
  • fYear
    1982
  • fDate
    7/1/1982 12:00:00 AM
  • Firstpage
    2286
  • Lastpage
    2291
  • Abstract
    Thyristors of higher voltage and current ratings containing new gate and self-protective features are being developed at General Electric with EPRI (Electric Power Research Institute) support. Some of the more important of these are described in this paper. Devices include light triggered thyristors (LTT\´s), now at the 5 and 6KV level, and asymr metric light triggered thyristors (ALTT\´s) with 50% higher surge capability and 50% faster turn-off times than a regular thyristor. New features include "controlled turn-on", which protects thyristors from destructive di/dt during turn-on, and " voltage breakover" (VBO) protection, which prevents destructive avalanche current turn-on.
  • Keywords
    Breakdown voltage; Circuit noise; HVDC transmission; Protection; Research and development; Semiconductor device noise; Surges; Thyristors; Voltage control; Working environment noise;
  • fLanguage
    English
  • Journal_Title
    Power Apparatus and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9510
  • Type

    jour

  • DOI
    10.1109/TPAS.1982.317435
  • Filename
    4111592