DocumentCode
1167430
Title
Thyristor Devices for Electric Power Systems
Author
Temple, V.A.K.
Author_Institution
General Electric Company Corporate Research and Development Center
Issue
7
fYear
1982
fDate
7/1/1982 12:00:00 AM
Firstpage
2286
Lastpage
2291
Abstract
Thyristors of higher voltage and current ratings containing new gate and self-protective features are being developed at General Electric with EPRI (Electric Power Research Institute) support. Some of the more important of these are described in this paper. Devices include light triggered thyristors (LTT\´s), now at the 5 and 6KV level, and asymr metric light triggered thyristors (ALTT\´s) with 50% higher surge capability and 50% faster turn-off times than a regular thyristor. New features include "controlled turn-on", which protects thyristors from destructive di/dt during turn-on, and " voltage breakover" (VBO) protection, which prevents destructive avalanche current turn-on.
Keywords
Breakdown voltage; Circuit noise; HVDC transmission; Protection; Research and development; Semiconductor device noise; Surges; Thyristors; Voltage control; Working environment noise;
fLanguage
English
Journal_Title
Power Apparatus and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0018-9510
Type
jour
DOI
10.1109/TPAS.1982.317435
Filename
4111592
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