High-power generation in IMPATT devices in the 100-200-GHz range

Author

Chen, Chien-Chung ; Mains, Richard K. ; Haddad, George I.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

38

Issue

8

fYear

1991

fDate

8/1/1991 12:00:00 AM

Firstpage

1701

Lastpage

1705

Abstract

A silicon double-drift IMPATT diode with high uniform doping levels was simulated. Simulation results show that it is possible for silicon IMPATT diodes to generate extremely high pulsed output power for frequencies above 100 GHz under high current-density operation. The highest output power matched to a 1-Ω load resistance obtained at 150 GHz is 37.7 W with a DC current density of 200 kA/cm², although the calculated power conversion efficiency is low. It is also shown that the low-power conversion efficiency limits the diode´s continuous wave power operation

Keywords

IMPATT diodes; digital simulation; elemental semiconductors; microwave generation; semiconductor device models; silicon; 1 ohm; 100 to 200 GHz; 150 GHz; 37.7 W; EHF; Si; continuous wave power operation; current density; double-drift IMPATT diode; high current-density operation; high power generation; high pulsed output power; high uniform doping levels; load resistance; low-power conversion efficiency; output power; power conversion efficiency; semiconductors; Breakdown voltage; Current density; Doping; Frequency; Power conversion; Power generation; Pulse generation; Semiconductor diodes; Silicon; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.119004

Filename

119004