High-frequency submicrometer Al/sub 0.48/In/sub 0.52/As/In/sub 0.53/Ga/sub 0.47/As heterostructure bipolar transistors

Author

Jalali, Bahram ; Nottenburg, Richard N. ; Chen, Young-Kai ; Sivco, D. ; Humphrey, D.A. ; Cho, Alfred Y.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

10

Issue

8

fYear

1989

Firstpage

391

Lastpage

393

Abstract

The high speed scaling of an Al/sub 0.48/In/sub 0.52/As/In/sub 0.53/Ga/sub 0.47/As submicrometer heterostructure bipolar transistor (HBT) is presented. Transistors with emitter dimensions of 0.5*11 and 3.5*3.5 mu m/sup 2/ exhibit unity current-gain cutoff frequencies of 63 and 70 GHz, respectively. Emitter current density greater than 3.3*10/sup 5/ A/cm/sup 2/ is demonstrated in a submicrometer AlInAs/InGaAs HBT. The analysis shows that the device speed is limited by the parasitic collector charging time.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 63 GHz; 70 GHz; Al/sub 0.48/In/sub 0.52/As-In/sub 0.53/Ga/sub 0.47/As; emitter current density; emitter dimensions; heterostructure bipolar transistors; high speed scaling; microwave characteristics; parasitic collector charging time; submicrometre HBT; unity current-gain cutoff frequencies; Current density; Cutoff frequency; Delay effects; Electron emission; Heterojunction bipolar transistors; Indium gallium arsenide; Large scale integration; Radiative recombination; Silicon; Spontaneous emission;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31767

Filename

31767