Title :
Comment, with reply, on ´Hot-electron hardened Si-gate MOSFET utilizing F implantation´ by Y. Nishioka, et al
Author :
Wright, P.J. ; Saraswat, Krishna C.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
For original paper see ibid., vol.10, p.141-3 (Apr. 1989). The commenters point out that the authors of the original paper were not, as they have claimed, the first to show the technique and benefits of implanting and diffusing fluorine. They raise a number of questions about their experimental method and interpretation of results. The authors reply that they did not make the claim attributed to them, and they defined their method and findings at length.<>
Keywords :
hot carriers; insulated gate field effect transistors; ion implantation; MOSFET; Si:F; diffusion; hot electron hardening; ion implantation; Annealing; Capacitive sensors; Dielectric devices; Electron devices; Implants; Ion beams; Lead compounds; MOSFET circuits; Oxidation; Performance evaluation;
Journal_Title :
Electron Device Letters, IEEE
