• DocumentCode
    116778
  • Title

    Problems of transfer of a figure of topology when forming 3D structures (the FinFET-technology of transistors)

  • Author

    Bogomolov, B.K.

  • Author_Institution
    Novosibirsk State Tech. Univ., Novosibirsk, Russia
  • fYear
    2014
  • fDate
    2-4 Oct. 2014
  • Firstpage
    79
  • Lastpage
    83
  • Abstract
    Experimentally it is confirmed that PHE Si process in CCl2F2/O2 plasma is well compatible to a photoresistive mask on the basis of FP-383. Dependences of rate of PHE Si on value of flows of oxygen and freon, anode current, sample layout in the reactor, physical characteristics of a silicon sample, etching time are studied. The PHE Si optimum mode suitable for practical use is found.
  • Keywords
    MOSFET; elemental semiconductors; silicon; sputter etching; 3D structures; CCl2F2/O2 plasma; FP-383; FinFET technology; Si; anode current; etching time; photoresistive mask; physical characteristics; sample layout; transfer problems; Anodes; Etching; Inductors; Plasmas; Resists; Silicon; Transistors; FinFET-transistor; Nanoelectronics; plasma chemical etching of silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Actual Problems of Electronics Instrument Engineering (APEIE), 2014 12th International Conference on
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    978-1-4799-6019-4
  • Type

    conf

  • DOI
    10.1109/APEIE.2014.7040772
  • Filename
    7040772
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=116778