Analysis of delta-doped and uniformly doped AlGaAs/GaAs HEMT´s by ensemble Monte Carlo simulations

Author

Kim, Ki Wook ; Tian, Hong ; Littlejohn, Michael A.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

38

Issue

8

fYear

1991

fDate

8/1/1991 12:00:00 AM

Firstpage

1737

Lastpage

1742

Abstract

Transport properties and device performance of delta-doped and uniformly doped AlGaAs/GaAs high electron mobility transistors (HEMTs) with identical threshold voltages and gate capacitors are investigated using two-dimensional self-consistent ensemble Monte Carlo simulations. The model includes the effects of real-space transfer and carrier degeneracy, as well as the influence of DX centers and surface states. A one-to-one comparison of simulation results for the two devices demonstrates superior performance for the delta-doped HEMT and provides a physical basis for the observed improvements. In particular, the delta-doped HEMT maintains its superior device performance as gate bias is increased. Reasons for these improvements are reported

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; semiconductor doping; 2D model; AlGaAs-GaAs; DX centers; HEMTs; carrier degeneracy; delta-doped HEMT; device performance; effects of real-space transfer; ensemble Monte Carlo simulations; gate capacitors; high electron mobility transistors; physical basis; semiconductors; surface states; threshold voltages; transport properties; uniformly doped HEMT; Capacitors; Electron mobility; Gallium arsenide; HEMTs; Helium; MESFETs; MODFETs; Microwave devices; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.119008

Filename

119008