DocumentCode :
1167948
Title :
Semiconductor Device-and-Lead Structure, Reprint of U.S. Patent 2,981,877 (Issued April 25, 1961. Filed July 30, 1959)
Author :
Noyce, Robert N.
Author_Institution :
Fairchild Semiconductor Corporation
Volume :
12
Issue :
2
fYear :
2007
Firstpage :
34
Lastpage :
40
Abstract :
Robert Noyce, who co-founded Fairchild Semiconductor in 1957 with seven others including Jean Hoerni and Gordon E. Moore, and went on to found Intel with Moore in 1968, received Patent No. 2,981,877 in 1961 for the first monolithic integrated circuit made of silicon. He and J.S. Kilby are recognized as co-inventors of the integrated circuit. Noyce received the President´s National Merit of Science Award in 1979 for his work, as did J.S. Kilby in 1969. Read all seven pages of the original patent filing.
Keywords :
Contacts; Junctions; Lead; Metals; Silicon; Strips; Transistors;
fLanguage :
English
Journal_Title :
Solid-State Circuits Society Newsletter, IEEE
Publisher :
ieee
ISSN :
1098-4232
Type :
jour
DOI :
10.1109/N-SSC.2007.4785577
Filename :
4785577
Link To Document :
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