Title :
Influence of Laser Pulse Duration in Single Event Upset Testing
Author :
Douin, A. ; Pouget, V. ; Darracq, F. ; Lewis, D. ; Fouillat, P. ; Perdu, P.
Author_Institution :
CNRS UMR 5818, Bordeaux I Univ.
Abstract :
Device simulations of laser induced SEU in an SRAM cell are performed with pulse durations from 100 fs to 100 mus. SEU threshold energy is notably dependent on the pulse duration. Two regimes are identified and modeled analytically and electrically
Keywords :
SPICE; SRAM chips; laser beam applications; PSPICE; SEU threshold energy; SRAM cell; device simulations; laser pulse duration; single event upset testing; Circuit testing; Discrete event simulation; Laboratories; Laser beams; Laser modes; Optical pulse generation; Optical pulses; Random access memory; Semiconductor lasers; Single event upset; Critical charge; device simulation; laser testing; pulse duration; single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.880939
