Title :
Analytical Model of Radiation Induced or Single Event Latchup in CMOS Integrated Circuits
Author_Institution :
Res. Inst. of Sci. Instruments
Abstract :
The new model to characterize radiation induced or single event latchup is developed. Analytical expressions for radiation dose rate and LET threshold have been obtained. The model fits the experimental data reasonably well
Keywords :
CMOS integrated circuits; radiation effects; CMOS integrated circuits; SEL; analytical model; dynamic systems theory; radiation dose rate; radiation induced latchup; single event latchup; Analytical models; Bipolar transistors; CMOS integrated circuits; Charge carrier processes; Current density; Equations; Equivalent circuits; Integrated circuit modeling; Numerical models; Semiconductor device modeling; Dynamic systems theory; latchup; threshold LET for SEL; threshold dose rate;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.878820
