Title :
Laser Mapping of SRAM Sensitive Cells: A Way to Obtain Input Parameters for DASIE Calculation Code
Author :
Miller, F. ; Buard, N. ; Hubert, G. ; Alestra, S. ; Baudrillard, G. ; Carrière, T. ; Gaillard, R. ; Palau, J.M. ; Saigné, F. ; Fouillat, P.
Author_Institution :
Corporate Res. Center, Eur. Aeronaut. Defence & Space Co.
Abstract :
This paper presents a new way of investigation using the laser method. It is based on laser threshold mappings of electronic devices. The main idea is to use these mappings in order to extract physical parameters, for instance sizes and shapes of the different sensitive areas of a component. These parameters can be used as input parameters for analytical or Monte Carlo calculation codes in order to predict the behavior of sensitive components towards radiations
Keywords :
Monte Carlo methods; SRAM chips; laser beam effects; DASIE calculation code; Monte Carlo calculation code; SRAM sensitive cell; electronic device; laser mapping; static random-access memory; Electron accelerators; Electronic components; Ion accelerators; Laser theory; Monte Carlo methods; National electric code; Radiation effects; Random access memory; Shape; Testing; Calculation codes; SEU; SRAM; laser mappings;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.880938
