DocumentCode
1168114
Title
Hg0.56 Cd0.44 Te 1.6- to 2.5-μm avalanche photodiode and noise study far from resonant impact ionization
Author
Orsal, Bernard ; Alabedra, Robert ; Maatougui, A. ; Flachet, J.C.
Author_Institution
CEM, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Volume
38
Issue
8
fYear
1991
fDate
8/1/1991 12:00:00 AM
Firstpage
1748
Lastpage
1756
Abstract
An investigation was made on the avalanche multiplication and impact ionization processes in p-n--n+ junctions formed in Hg0.56Cd0.44Te solid solutions. Photocurrent multiplication was determined at 300 K in planar p-n- -n+ structures characterized by a breakdown voltage of 30 V. The experimental results were used to calculate the electron, α, and hole, β, ionization coefficients. It was found that α is greater than β because Δ, the spin-orbit splitting energy, is higher than the bandgap energy. These experimental results were in satisfactory agreement with multiplication noise measurements using separate electron and hole injection
Keywords
II-VI semiconductors; avalanche photodiodes; electron device noise; infrared detectors; mercury compounds; semiconductor device models; 1.6 to 2.5 micron; 30 V; 300 K; Hg0.56Cd0.44Te; IR photodiodes; avalanche multiplication; avalanche photodiode; bandgap energy; breakdown voltage; electron injection; experimental results; hole injection; impact ionization processes; ionization coefficients; multiplication noise measurements; noise study; p-n--n+ junctions; photocurrent multiplication; resonant impact ionization; semiconductors; spin-orbit splitting energy; Area measurement; Avalanche photodiodes; Capacitance-voltage characteristics; Charge carrier processes; Dielectric measurements; Electric variables measurement; Impact ionization; Mercury (metals); Resonance; Tellurium;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.119010
Filename
119010
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