Title :
Analysis of 2-MeV Electron-Irradiation Induced Degradation in FD-SOI MOSFETs Fabricated on ELTRAN and UNIBOND Wafers
Author :
Hayama, Kiyoteru ; Takakura, Kenichiro ; Ohyama, Hidenori ; Rafí, Joan Marc ; Mercha, Abdelkarim ; Simoen, Eddy ; Claeys, Cor
Author_Institution :
Nat. Coll. of Technol., Kumamoto
Abstract :
The degradation of the electrical performance of 2-MeV electron-irradiated thin gate oxide FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers is reported. The difference of the degradation is examined by analyzing the extracted MOS-transistor parameters. The degradation of the performance is discussed taking into account the front-back gate coupling effect and the floating body effect
Keywords :
MOSFET; electron beam effects; radiation hardening (electronics); semiconductor thin films; silicon-on-insulator; ELTRAN-UNIBOND wafers; electrical performance degradation; electron-irradiation; floating body effect; gate coupling effect; thin gate oxide FD-SOI MOSFET; Degradation; Educational technology; Electrons; Immune system; Ionization; MOSFET circuits; Semiconductor films; Single event upset; Testing; Tunneling; ELTRAN; Electron irradiation; FD-SOI; MOSFET; UNIBOND;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.880925
