Title :
SPICE Modelling of a Discrete COTS SiGe HBT for Digital Applications up to MGy Dose Levels
Author :
Van Uffelen, M. ; Geboers, S. ; Leroux, P. ; Berghmans, F.
Author_Institution :
SCK/CEN, Mol
Abstract :
Future maintenance tasks of the International Experimental Thermonuclear fusion Reactor (ITER) will require communication links between the remotely operated equipment in the reactor vessel and the control room, that are radiation tolerant up to MGy dose levels. We therefore assessed the DC behaviour of a COTS SiGe heterojunction bipolar transistor (HBT) under gamma radiation up to more than 4 MGy. The DC current gain (beta) presents a limited loss of about 30% for a base current of 100 muA. Our in-situ measurements allowed us to adapt the manufacturer´s SPICE model and account for these radiation effects. Circuit-hardened driving electronics for both photonic transmitters and receivers can hence be designed
Keywords :
SPICE; fusion reactor materials; fusion reactor safety; gamma-ray effects; heterojunction bipolar transistors; nuclear reactor maintenance; radiation hardening (electronics); semiconductor device models; telecommunication links; DC behaviour; HBT; International Experimental Thermonuclear fusion Reactor; SPICE modelling; SiGe; circuit-hardening; communication link; digital application; discrete COTS; dose levels; gamma radiation; heterojunction bipolar transistor; in-situ measurement; maintenance task; photonic transmitter-receiver; radiation effects; radiation tolerance; reactor vessel; remotely operated equipment; Communication system control; Fusion reactors; Gamma rays; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Optical losses; SPICE; Silicon germanium; Virtual manufacturing; DC current gain; SPICE model; SiGe HBT; ionizing radiation;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.880949
