• DocumentCode
    1168298
  • Title

    RADFET Response to Proton Irradiation Under Different Biasing Configurations

  • Author

    Jaksic, A. ; Kimoto, Y. ; Mohammadzadeh, A. ; Hajdas, W.

  • Author_Institution
    Tyndall Nat. Inst.
  • Volume
    53
  • Issue
    4
  • fYear
    2006
  • Firstpage
    2004
  • Lastpage
    2007
  • Abstract
    Response of RADFETs manufactured at Tyndall National Institute to protons with energies of up to 60 MeV has been studied. RADFET response is compared for different biasing configurations and the effect of package lids is investigated
  • Keywords
    MOSFET; dosimetry; proton effects; semiconductor device packaging; RADFET response; Tyndall National Institute; biasing configuration; dosimetry; package lid effect; proton irradiation; radiation sensing MOSFET; Aerospace industry; Electrons; Energy consumption; Geometry; MOSFETs; Manufacturing; Microprocessors; Packaging; Protons; Threshold voltage; Dosimetry; RADFETs; proton response;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2006.879188
  • Filename
    1684050
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1168298