Title :
RADFET Response to Proton Irradiation Under Different Biasing Configurations
Author :
Jaksic, A. ; Kimoto, Y. ; Mohammadzadeh, A. ; Hajdas, W.
Author_Institution :
Tyndall Nat. Inst.
Abstract :
Response of RADFETs manufactured at Tyndall National Institute to protons with energies of up to 60 MeV has been studied. RADFET response is compared for different biasing configurations and the effect of package lids is investigated
Keywords :
MOSFET; dosimetry; proton effects; semiconductor device packaging; RADFET response; Tyndall National Institute; biasing configuration; dosimetry; package lid effect; proton irradiation; radiation sensing MOSFET; Aerospace industry; Electrons; Energy consumption; Geometry; MOSFETs; Manufacturing; Microprocessors; Packaging; Protons; Threshold voltage; Dosimetry; RADFETs; proton response;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.879188
