Title :
PtRh resistors for Si compatible low-T/sub c/ Josephson technology
Author :
Stawiasz, K.G. ; Ketchen, M.B. ; Kleinsasser, A.W.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A PtRh resistor has been developed as an integral part of an advanced planarized low-T/sub c/ Josephson technology that is compatible with Si integrated circuit processing. Electron-beam evaporated from a single source, the PtRh films have a sheet resistance well controlled in the range of 3-20 /spl Omega//square that is independent of temperature from 4.2 K down to at least 10 mK. The contact resistivity between PtRh, with a sheet resistance of 5 /spl Omega//square and Nb interconnects is typically 0.7 /spl Omega//spl middot//spl mu/m.<>
Keywords :
Josephson effect; electron beam deposition; platinum alloys; rhenium alloys; superconducting integrated circuits; thin film resistors; vapour deposited coatings; 4.2 K; Nb; Nb interconnects; PtRh; PtRh films; PtRh resistors; Si compatible Josephson technology; contact resistivity; electron-beam evaporation; planarized low-T/sub c/ Josephson technology; sheet resistance; superconducting IC; Adhesives; Conductivity; Contact resistance; Fabrication; Platinum alloys; Resistors; Superconducting films; Superconducting materials; Superconducting transition temperature; Temperature distribution;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
