Title :
Elimination of Enhanced Low-Dose-Rate Sensitivity in Linear Bipolar Devices Using Silicon-Carbide Passivation
Author :
Shaneyfelt, Marty R. ; Maher, Michael C. ; Camilletti, Robert C. ; Schwank, James R. ; Pease, Ronald L. ; Russell, Brian A. ; Dodd, Paul E.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM
Abstract :
The type of final chip passivation layer used to fabricate linear bipolar circuits can have a major impact on the total dose hardness of some circuits. It is demonstrated that National Semiconductor Corporation linear bipolar devices fabricated with only an amorphous silicon carbide passivation layer do not exhibit enhanced low-dose-rate sensitivity (ELDRS), while devices from the same production lot fabricated with other types of passivation layers are ELDRS sensitive. SiC passivation possesses mechanical, electrical and chemical properties that make it compatible with linear device fabrication processes. These properties of SiC passivation layers, combined with the excellent radiation response of devices passivated with SiC, make SiC passivation layers a very attractive choice for devices packaged in either ceramic or plastic-encapsulated packages for use in space environments
Keywords :
bipolar analogue integrated circuits; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; passivation; radiation hardening (electronics); sensitivity; silicon compounds; stress effects; thermal stresses; National Semiconductor Corporation; SiC; enhanced low-dose-rate sensitivity; hardness assurance testing; integrated circuit reliability; integrated circuit testing; linear bipolar device fabrication; mechanical stress; packaging; radiation hardening; silicon-carbide passivation layer; thermal cycling; thermal stress effects; Amorphous silicon; Ceramics; Chemical processes; Circuits; Fabrication; Mechanical factors; Passivation; Plastic packaging; Production; Silicon carbide; Enhanced low-dose-rate sensitivity (ELDRS); hardness assurance testing; integrated circuit reliability; integrated circuit testing; linear bipolar integrated circuits; mechanical stress; passivation layers; pre-irradiation elevated temperature stress; radiation effects; radiation hardening (electronics); radiation response; reliability screens; silicon carbide; thermal cycling; thermal stress effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.877981
