Design and Assessment of a High Gamma-Dose Tolerant VCSEL Driver With Discrete SiGe HBTs

Author

Leroux, P. ; Van Uffelen, M. ; Berghmans, F. ; Giraud, A.

Author_Institution

SCK/CEN, Mol

Volume

53

Issue

4

fYear

2006

Firstpage

2033

Lastpage

2039

Abstract

A digital VCSEL driver has been designed, simulated and assessed under radiation, using discrete SiGe HBTs. The circuit tolerates high levels of gamma radiation, up to 12 MGy, features less than 2% drift in the forward current of the VCSEL and operates well above 10 MHz. The output duty cycle shows no notable degradation at 200 kHz, enabling the design of robust analog and digital communication systems using pulse-width-modulation (PWM) schemes

Keywords

Ge-Si alloys; bipolar digital integrated circuits; driver circuits; gamma-ray effects; heterojunction bipolar transistors; integrated circuit testing; optical transmitters; pulse width modulation; radiation hardening (electronics); semiconductor lasers; surface emitting lasers; International experimental thermonuclear fusion reactor; SiGe; communication system; digital VCSEL driver; discrete HBT; high gamma-dose tolerance; optical transmitter; pulse-width-modulation; radiation effect; vertical-cavity surface-emitting laser; Circuit simulation; Degradation; Digital communication; Driver circuits; Gamma rays; Germanium silicon alloys; Pulse width modulation; Robustness; Silicon germanium; Vertical cavity surface emitting lasers; International experimental thermonuclear fusion reactor (ITER); SiGe HBT; laser driver; optical transmitter; radiation effects; vertical-cavity surface-emitting laser (VCSEL);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.880946

Filename

1684055